3mm Phototransistor-ChangLi Optoelectronic Technology Co.,Ltd.__Lightstrade

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3mm Phototransistor

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Part Number	Emitting Material	Wave Length λD(nm)	Emitting Color	Lens Type	VF(v) Typ.	IV(mcd) Typ.	viewing Angle 20 1/2(")
					(at20mA)
CL-3M4B	GaAlAs	-	-	Black	-	-	-

Parameter	Sybol	Min.	Typ.	Max.	Unit	Text Condition
Collector-Emitter Breckdown Voltage	BV ceo	30	-	100	V	IC=100uA IB=0
Emitter-Collector Breckdown Voltage	BV ceo	6.5	-	-	V	IE=100uA IB=0
Collector Dark Current	I ceo	-	390	-	nA	VCE=20V H=OMW/C㎡
Collector-Emitter Saturation Voltage	Vce(s)	-	40	-	V	IC=20mA IB=100uA
Rise time	Tr	-	15	-	uS	VCE=5V IC=1mA
Fall time	Tf	-	15	-	uS	RL=1000Ω

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3mm Phototransistor

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